Mécanisme de diffusion du bore dans le carbure de siliciumKONSTANTINOV, A. O.Fizika i tehnika poluprovodnikov. 1988, Vol 22, Num 1, pp 164-168, issn 0015-3222Article

Luminescence «chaude» dans la disruption électrique des jonctions p-n en carbure de siliciumKONSTANTINOV, A. O.Fizika i tehnika poluprovodnikov. 1987, Vol 21, Num 4, pp 670-675, issn 0015-3222Article

Pincement de la disruption en avalanche dans le carbure de siliciumKONSTANTINOV, A. O.Fizika i tehnika poluprovodnikov. 1989, Vol 23, Num 6, pp 985-993, issn 0015-3222Article

Etude de la multiplication par avalanche ambipolaire dans le carbure de siliciumKONSTANTINOV, A. O.Fizika i tehnika poluprovodnikov. 1983, Vol 17, Num 12, pp 2124-2128, issn 0015-3222Article

Cause of the appearance of a surface plateau of the phosphorus diffusion profile in siliconKONSTANTINOV, A. O; TYBULEWICZ, A.Soviet physics. Semiconductors. 1992, Vol 26, Num 2, pp 191-198, issn 0038-5700Article

Nature of point defects generated during diffusion of acceptor impurities in silicon carbideKONSTANTINOV, A. O; TYBULEWICZ, A.Soviet physics. Semiconductors. 1992, Vol 26, Num 2, pp 151-156, issn 0038-5700Article

Injection of nonequilbrium point defects during diffusion of impurities in crystal with a mixed self-diffusion mechanismKONSTANTINOV, A. O; TYBULEWICZ, A.Soviet physics. Semiconductors. 1991, Vol 25, Num 7, pp 710-714, issn 0038-5700Article

Etude de la multiplication en avalanche des porteurs dans le carbure de silicium à l'aide d'une sonde électroniqueKONNIKOV, S. G; KONSTANTINOV, A. O; LITMANOVICH, V. I et al.Fizika i tehnika poluprovodnikov. 1984, Vol 18, Num 9, pp 1556-1560, issn 0015-3222Article

Temperature dependence of the photoelectric conversion quantum efficiency of 4H-SiC schottky UV photodetectorsBLANK, T. V; GOLDBERG, Yu A; KALININA, E. V et al.Semiconductor science and technology. 2005, Vol 20, Num 8, pp 710-715, issn 0268-1242, 6 p.Article

Light-emitting diodes made from silicon carbide bombarded with fast electronsVODAKOV, Y. A; GIRKA, A. I; KONSTANTINOV, A. O et al.Soviet physics. Semiconductors. 1992, Vol 26, Num 11, pp 1041-1043, issn 0038-5700Article

Fabrication and properties of high-resistivity porous silicon carbide for SiC power device passivationKONSTANTINOV, A. O; HARRIS, C. I; HENRY, A et al.Materials science & engineering. B, Solid-state materials for advanced technology. 1995, Vol 29, Num 1-3, pp 114-117, issn 0921-5107Conference Paper

Ionisation par chocs dans un super-réseau dans SiC-6HDMITRIEV, A. P; KONSTANTINOV, A. O; LITVIN, D. P et al.Fizika i tehnika poluprovodnikov. 1983, Vol 17, Num 6, pp 1093-1098, issn 0015-3222Article

Equilibrium crystal shapes for 6H and 4H SiC grown on non-planar substratesNORDELL, N; KARLSSON, S; KONSTANTINOV, A. O et al.Materials science & engineering. B, Solid-state materials for advanced technology. 1999, Vol 61-62, pp 130-134, issn 0921-5107Conference Paper

Study of avalanche breakdown and impact ionization in 4H silicon carbide : III-V nitrides and silicon carbideKONSTANTINOV, A. O; WAHAB, Q; NORDELL, N et al.Journal of electronic materials. 1998, Vol 27, Num 4, pp 335-341, issn 0361-5235Article

The mechanism for cubic SiC formation on off-oriented substratesKONSTANTINOV, A. O; HALLIN, C; PECZ, B et al.Journal of crystal growth. 1997, Vol 178, Num 4, pp 495-504, issn 0022-0248Article